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US Patent Issued to Tokyo Electron on Aug. 25 for "In situ etch rate differentiation through oxidation" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,117, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo). "In situ etch rate differentiation through oxidation" was invented by ... Read More


US Patent Issued to Semiconductor Manufacturing International (Beijing), Semiconductor Manufacturing International (Shanghai) on Aug. 25 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,118, issued on Aug. 25, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing ... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Carbon-based liner to reduce contact resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,119, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Carbon-based liner to reduce contac... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Semiconductor structures with improved metal capping layers" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,120, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor structures with impro... Read More


US Patent Issued to Kioxia on Aug. 25 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,121, issued on Aug. 25, was assigned to Kioxia Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was invented by S... Read More


US Patent Issued to Applied Materials on Aug. 25 for "Method for metal gapfill" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,122, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Method for metal gapfill" was invented by Yi Xu (San... Read More


US Patent Issued to Applied Materials on Aug. 25 for "Integration solution for NAND deep contact gap fill" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,123, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Integration solution for NAND deep contact gap fill"... Read More


US Patent Issued to International Business Machines on Aug. 25 for "Via alignment in single damascene structure" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,124, issued on Aug. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Via alignment in single damascene structure"... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Interconnect structure with dielectric cap layer and etch stop layer stack" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,125, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interconnect structure with dielect... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Semiconductor device and method of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,126, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method of ... Read More